Serially connected monolayer MoS FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography

Serially connected monolayer MoS FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography

We demonstrate sub-10 nm transistor channel lengths by directed self-assembly patterning of monolayer MoS[subscript 2] in a periodic chain of homojunction semiconducting-(2H) and metallic-phase (1T') MoS[subscript 2] regions with half-pitch of 7.5 nm. The MoS[subscript 2] composite transistor p...

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Bibliographic Details
Main Authors: Nourbakhsh, Amirhasan, Zubair, Ahmad, Tavakkoli Kermani Ghariehali, Amir, Sajjad, Redwan Noor, Ling, Xi, Dresselhaus, Mildred, Kong, Jing, Berggren, Karl K, Antoniadis, Dimitri A, Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers (IEEE) 2017
Online Access:http://hdl.handle.net/1721.1/110749
https://orcid.org/0000-0001-6162-1749
https://orcid.org/0000-0001-9827-3557
https://orcid.org/0000-0002-9498-7808
https://orcid.org/0000-0001-8385-0438
https://orcid.org/0000-0002-1955-3081
https://orcid.org/0000-0001-8492-2261
https://orcid.org/0000-0003-0551-1208
https://orcid.org/0000-0001-7453-9031
https://orcid.org/0000-0002-4836-6525
https://orcid.org/0000-0002-2190-563X

Internet

http://hdl.handle.net/1721.1/110749
https://orcid.org/0000-0001-6162-1749
https://orcid.org/0000-0001-9827-3557
https://orcid.org/0000-0002-9498-7808
https://orcid.org/0000-0001-8385-0438
https://orcid.org/0000-0002-1955-3081
https://orcid.org/0000-0001-8492-2261
https://orcid.org/0000-0003-0551-1208
https://orcid.org/0000-0001-7453-9031
https://orcid.org/0000-0002-4836-6525
https://orcid.org/0000-0002-2190-563X

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