Resonance-enhanced waveguide-coupled silicon-germanium detector
A photodiode with 0.55 ± 0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium within a microring which is compatible with high-perf...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2017
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| Online Access: | http://hdl.handle.net/1721.1/110934 https://orcid.org/0000-0002-1245-4179 https://orcid.org/0000-0003-0420-2235 |