Temperature Dependent Characteristics of InAlN/GaN HEMTs for mm-Wave Applications

Temperature Dependent Characteristics of InAlN/GaN HEMTs for mm-Wave Applications

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This work presents a 100 nm-gate InAlN/GaN HEMT with current-gain cutoff frequency (f[subscript T]) up to 120 GHz at room temperature (25 °C). Temperature dependent DC and RF characteristics are measured from 25 °C to 200 °C. The maximum drain current (I[subscript d−max]) decreases from 1247 mA/mm t...

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Bibliographic Details
Main Authors: Xing, Weichuan, Liu, Zhihong, Ng, Geok Ing, Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Elsevier 2017
Online Access:http://hdl.handle.net/1721.1/111595
https://orcid.org/0000-0002-2190-563X

Internet

http://hdl.handle.net/1721.1/111595
https://orcid.org/0000-0002-2190-563X

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