High-speed polysilicon CMOS photodetector for telecom and datacom

High-speed polysilicon CMOS photodetector for telecom and datacom

Absorption by mid-bandgap states in polysilicon or heavily implanted silicon has been previously utilized to implement guided-wave infrared photodetectors in CMOS compatible photonic platforms. Here, we demonstrate a resonant guided-wave photodetector based on the polysilicon layer that is used for...

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Bibliographic Details
Main Authors: Atabaki, Amir H, Meng, Huaiyu, Alloatti, Luca, Mehta, Karan Kartik, Ram, Rajeev J
Other Authors: Massachusetts Institute of Technology. Research Laboratory of Electronics
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2017
Online Access:http://hdl.handle.net/1721.1/111620
https://orcid.org/0000-0002-5020-5472
https://orcid.org/0000-0002-7635-8266
https://orcid.org/0000-0002-1245-4179
https://orcid.org/0000-0002-0917-7182
https://orcid.org/0000-0003-0420-2235

Internet

http://hdl.handle.net/1721.1/111620
https://orcid.org/0000-0002-5020-5472
https://orcid.org/0000-0002-7635-8266
https://orcid.org/0000-0002-1245-4179
https://orcid.org/0000-0002-0917-7182
https://orcid.org/0000-0003-0420-2235

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