High-speed polysilicon CMOS photodetector for telecom and datacom
Absorption by mid-bandgap states in polysilicon or heavily implanted silicon has been previously utilized to implement guided-wave infrared photodetectors in CMOS compatible photonic platforms. Here, we demonstrate a resonant guided-wave photodetector based on the polysilicon layer that is used for...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2017
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| Online Access: | http://hdl.handle.net/1721.1/111620 https://orcid.org/0000-0002-5020-5472 https://orcid.org/0000-0002-7635-8266 https://orcid.org/0000-0002-1245-4179 https://orcid.org/0000-0002-0917-7182 https://orcid.org/0000-0003-0420-2235 |
| Summary: | Absorption by mid-bandgap states in polysilicon or heavily implanted silicon has been previously utilized to implement guided-wave infrared photodetectors in CMOS compatible photonic platforms. Here, we demonstrate a resonant guided-wave photodetector based on the polysilicon layer that is used for the transistor gate in a microelectronic SOI CMOS process without any change to the foundry process flow (“zero-change” CMOS). Through a combination of doping mask layers, a lateral pn junction diode in the polysilicon is demonstrated with a strong electric field to enable efficient photo-carrier extraction and high-speed operation. This photodetector has a responsivity of more than 0.14 A/W from 1300 to 1600 nm, a 10 GHz bandwidth, and 80 nA dark current at 15 V reverse bias. |
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