High-speed polysilicon CMOS photodetector for telecom and datacom
Absorption by mid-bandgap states in polysilicon or heavily implanted silicon has been previously utilized to implement guided-wave infrared photodetectors in CMOS compatible photonic platforms. Here, we demonstrate a resonant guided-wave photodetector based on the polysilicon layer that is used for...
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| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2017
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| Online Access: | http://hdl.handle.net/1721.1/111620 https://orcid.org/0000-0002-5020-5472 https://orcid.org/0000-0002-7635-8266 https://orcid.org/0000-0002-1245-4179 https://orcid.org/0000-0002-0917-7182 https://orcid.org/0000-0003-0420-2235 |
| _version_ | 1826207106949185536 |
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| author | Atabaki, Amir H Meng, Huaiyu Alloatti, Luca Mehta, Karan Kartik Ram, Rajeev J |
| author2 | Massachusetts Institute of Technology. Research Laboratory of Electronics |
| author_facet | Massachusetts Institute of Technology. Research Laboratory of Electronics Atabaki, Amir H Meng, Huaiyu Alloatti, Luca Mehta, Karan Kartik Ram, Rajeev J |
| author_sort | Atabaki, Amir H |
| collection | MIT |
| description | Absorption by mid-bandgap states in polysilicon or heavily implanted silicon has been previously utilized to implement guided-wave infrared photodetectors in CMOS compatible photonic platforms. Here, we demonstrate a resonant guided-wave photodetector based on the polysilicon layer that is used for the transistor gate in a microelectronic SOI CMOS process without any change to the foundry process flow (“zero-change” CMOS). Through a combination of doping mask layers, a lateral pn junction diode in the polysilicon is demonstrated with a strong electric field to enable efficient photo-carrier extraction and high-speed operation. This photodetector has a responsivity of more than 0.14 A/W from 1300 to 1600 nm, a 10 GHz bandwidth, and 80 nA dark current at 15 V reverse bias. |
| first_indexed | 2024-09-23T13:44:13Z |
| format | Article |
| id | mit-1721.1/111620 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T13:44:13Z |
| publishDate | 2017 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/1116202022-10-01T16:50:11Z High-speed polysilicon CMOS photodetector for telecom and datacom Atabaki, Amir H Meng, Huaiyu Alloatti, Luca Mehta, Karan Kartik Ram, Rajeev J Massachusetts Institute of Technology. Research Laboratory of Electronics Atabaki, Amir H Meng, Huaiyu Alloatti, Luca Mehta, Karan Kartik Ram, Rajeev J Absorption by mid-bandgap states in polysilicon or heavily implanted silicon has been previously utilized to implement guided-wave infrared photodetectors in CMOS compatible photonic platforms. Here, we demonstrate a resonant guided-wave photodetector based on the polysilicon layer that is used for the transistor gate in a microelectronic SOI CMOS process without any change to the foundry process flow (“zero-change” CMOS). Through a combination of doping mask layers, a lateral pn junction diode in the polysilicon is demonstrated with a strong electric field to enable efficient photo-carrier extraction and high-speed operation. This photodetector has a responsivity of more than 0.14 A/W from 1300 to 1600 nm, a 10 GHz bandwidth, and 80 nA dark current at 15 V reverse bias. United States. Defense Advanced Research Projects Agency (Award HR0011-11-C-0100) United States. Defense Advanced Research Projects Agency (Contract HR0011- 11-9-0009) 2017-09-21T20:14:41Z 2017-09-21T20:14:41Z 2017-09-21 Article http://purl.org/eprint/type/JournalArticle 0003-6951 1077-3118 http://hdl.handle.net/1721.1/111620 Atabaki, Amir H. et al. “High-Speed Polysilicon CMOS Photodetector for Telecom and Datacom.” Applied Physics Letters 109, 11 (September 2016): 111106 © 2016 AIP Publishing https://orcid.org/0000-0002-5020-5472 https://orcid.org/0000-0002-7635-8266 https://orcid.org/0000-0002-1245-4179 https://orcid.org/0000-0002-0917-7182 https://orcid.org/0000-0003-0420-2235 en_US http://dx.doi.org/10.1063/1.4962641 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT Web Domain |
| spellingShingle | Atabaki, Amir H Meng, Huaiyu Alloatti, Luca Mehta, Karan Kartik Ram, Rajeev J High-speed polysilicon CMOS photodetector for telecom and datacom |
| title | High-speed polysilicon CMOS photodetector for telecom and datacom |
| title_full | High-speed polysilicon CMOS photodetector for telecom and datacom |
| title_fullStr | High-speed polysilicon CMOS photodetector for telecom and datacom |
| title_full_unstemmed | High-speed polysilicon CMOS photodetector for telecom and datacom |
| title_short | High-speed polysilicon CMOS photodetector for telecom and datacom |
| title_sort | high speed polysilicon cmos photodetector for telecom and datacom |
| url | http://hdl.handle.net/1721.1/111620 https://orcid.org/0000-0002-5020-5472 https://orcid.org/0000-0002-7635-8266 https://orcid.org/0000-0002-1245-4179 https://orcid.org/0000-0002-0917-7182 https://orcid.org/0000-0003-0420-2235 |
| work_keys_str_mv | AT atabakiamirh highspeedpolysiliconcmosphotodetectorfortelecomanddatacom AT menghuaiyu highspeedpolysiliconcmosphotodetectorfortelecomanddatacom AT alloattiluca highspeedpolysiliconcmosphotodetectorfortelecomanddatacom AT mehtakarankartik highspeedpolysiliconcmosphotodetectorfortelecomanddatacom AT ramrajeevj highspeedpolysiliconcmosphotodetectorfortelecomanddatacom |