High-speed polysilicon CMOS photodetector for telecom and datacom
Absorption by mid-bandgap states in polysilicon or heavily implanted silicon has been previously utilized to implement guided-wave infrared photodetectors in CMOS compatible photonic platforms. Here, we demonstrate a resonant guided-wave photodetector based on the polysilicon layer that is used for...
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2017
|
| Online Access: | http://hdl.handle.net/1721.1/111620 https://orcid.org/0000-0002-5020-5472 https://orcid.org/0000-0002-7635-8266 https://orcid.org/0000-0002-1245-4179 https://orcid.org/0000-0002-0917-7182 https://orcid.org/0000-0003-0420-2235 |