High-speed modulator with interleaved junctions in zero-change CMOS photonics
A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a lin...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2017
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| Online Access: | http://hdl.handle.net/1721.1/111624 https://orcid.org/0000-0002-1245-4179 https://orcid.org/0000-0003-0420-2235 |