Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

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High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate with 6° off-cut using a heavily arsenic (As) doped Ge seed layer. The growth steps consists of (i) growth of a heavily As-doped Ge seed layer at low temperature (LT, at 400°C), (ii) Ge growth with As gradually re...

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Bibliographic Details
Main Authors: Lee, Kwang Hong, Bao, Shuyu, Wang, Bing, Wang, Cong, Yoon, Soon Fatt, Tan, Chuan Seng, Michel, Jurgen, Fitzgerald, Eugene A
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Published: AIP Publishing 2017
Online Access:http://hdl.handle.net/1721.1/111830
https://orcid.org/0000-0002-1891-1959

Internet

http://hdl.handle.net/1721.1/111830
https://orcid.org/0000-0002-1891-1959

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