Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer
High quality germanium (Ge) epitaxial film is grown directly on silicon (001) substrate with 6° off-cut using a heavily arsenic (As) doped Ge seed layer. The growth steps consists of (i) growth of a heavily As-doped Ge seed layer at low temperature (LT, at 400°C), (ii) Ge growth with As gradually re...
Main Authors: | , , , , , , , |
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Other Authors: | |
Format: | Article |
Published: |
AIP Publishing
2017
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Online Access: | http://hdl.handle.net/1721.1/111830 https://orcid.org/0000-0002-1891-1959 |
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Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer
Published 2016
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Journal Article