Dielectric reliability in high-voltage GaN metal-insulator-semiconductor high electron mobility transistors

Dielectric reliability in high-voltage GaN metal-insulator-semiconductor high electron mobility transistors

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017.

Bibliographic Details
Main Author:	Warnock, Shireen M
Other Authors:	Jesús A. del Alamo.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2017
Subjects:	Electrical Engineering and Computer Science.
Online Access:	http://hdl.handle.net/1721.1/112032

Similar Items

Dielectric reliability in GaN metal-insulator-semiconductor high electron mobility transistors
by: Lee, Ethan S
Published: (2019)

Time dependent dielectric breakdown in novel GaN metal-insulator-semiconductor high electron mobility transistors
by: Lednev, Alexander I.(Alexander Igorevich)
Published: (2019)

Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)
by: Lau, Sien Hui
Published: (2020)

Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate
by: Demirtas, Sefa, et al.
Published: (2010)

Methodology for assessing the reliability of GaN high-electron-mobility transistors
by: Gunawan, Anton.
Published: (2012)

Reliability of GaN high electron mobility transistors on silicon substrates
by: Demirtas, Sefa
Published: (2010)

Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature
by: Warnock, Shireen M., et al.
Published: (2020)

Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
by: Ye, G., et al.
Published: (2014)

On-state reliability study of AlGaN/GaN high electron mobility transistor on silicon
by: Syaranamual, Govindo Joannesha
Published: (2018)

Reliability of W-Band InAIN/GaN High Electron Mobility Transistors
by: Wu, Yufei, Ph. D. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Published: (2017)

Degradation mechanisms of GaN high electron mobility transistors
by: Joh, Jungwoo
Published: (2007)

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors
by: Joh, Jungwoo, et al.
Published: (2010)

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors
by: Zhang, Yuhao, et al.
Published: (2018)

Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors
by: Joh, Jungwoo, et al.
Published: (2012)

Dynamic ON-resistance in high voltage GaN field-effect-transistors
by: Jin, Donghyun
Published: (2014)

Pulsed current-voltage characteristics of AlGaN/GaN high-electron-mobility-transistors on HR-Si substrate
by: Lee, Wei Yi.
Published: (2009)

Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation
by: Sasangka, W. A., et al.
Published: (2017)

Degradation study of GaN-based high electron mobility transistors
by: Lius, Melina Novalia Jontera
Published: (2023)

Characterizations of GaN-based high-electron-mobility-transistors (hemts)
by: Wong, Wei Jie.
Published: (2012)

RF Power Degradation of GaN High Electron Mobility Transistors
by: Joh, Jungwoo, et al.
Published: (2012)

Electric field engineering in GaN high electron mobility transistors
by: Zhao, Xu, S.M. Massachusetts Institute of Technology
Published: (2008)

Physics of electrical degradation in GaN high electron mobility transistors
by: Joh, Jungwoo
Published: (2010)

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors
by: Joh, Jungwoo, et al.
Published: (2010)

First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding
by: Li, Hanchao, et al.
Published: (2024)

Studies of traps in AlGaN/GaN high electron mobility transistors on silicon
by: Anand Mulagumoottil Jesudas
Published: (2016)

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors
by: Marino, Fabio Alessio, et al.
Published: (2011)

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors
by: Lu, Bin, et al.
Published: (2012)

Effect of Ge diffusion on AlxGa1-xN/GaN high electron mobility transistors on a thin silicon-on-insulator
by: Bera, L. K., et al.
Published: (2014)

Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics
by: Chung, Jinwook W. (Jinwook Will)
Published: (2011)

Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors
by: Jayanta Joglekar, Sameer
Published: (2017)

Regrown ohmic contact to GaN-based high electron mobility transistors
by: Tan, Eleen
Published: (2023)

Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs)
by: Phia, Chen Yew
Published: (2020)

GaN based high mobility electron transistors with regrown ohmic contacts
by: Weng, Don Letian
Published: (2024)

Deeply-scaled GaN high electron mobility transistors for RF applications
by: Lee, Dong Seup
Published: (2014)

AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process
by: Liu, Xinke, et al.
Published: (2013)

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors
by: Chung, Jinwook W. (Jinwook Will)
Published: (2009)

Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors
by: Dreyer, Cyrus E., et al.
Published: (2017)

ZrO2 as high-K gate dielectric for GaN-based transistors
by: Ye, Gang
Published: (2016)

High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor
by: Teng, J. H., et al.
Published: (2017)

Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress
by: Wu, Yufei, Ph. D. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Published: (2014)