Heteroepitaxial growth of In In[subscript 0.30]Ga[subscript 0.70]As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Heteroepitaxial growth of In In[subscript 0.30]Ga[subscript 0.70]As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

We report on the growth of an In[subscript 0.30]Ga[subscript 0.70]As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing...

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Bibliographic Details
Main Authors: Kohen, David, Nguyen, Xuan Sang, Yadav, Sachin, Kumar, Annie, Made, Riko I, Heidelberger, Christopher, Gong, Xiao, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Yeo, Yee Chia, Yoon, Soon Fatt, Fitzgerald, Eugene A.
Other Authors: Lincoln Laboratory
Format: Article
Published: American Institute of Physics (AIP) 2017
Online Access:http://hdl.handle.net/1721.1/112299
https://orcid.org/0000-0002-2429-8943

Internet

http://hdl.handle.net/1721.1/112299
https://orcid.org/0000-0002-2429-8943

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