Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene

Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene

Graphene epitaxy on the Si face of a SiC wafer offers monolayer graphene with unique crystal orientation at the wafer-scale. However, due to carrier scattering near vicinal steps and excess bilayer stripes, the size of electrically uniform domains is limited to the width of the terraces extending up...

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Bibliographic Details
Main Authors: Zhou, Xiaodong, Kim, Seyoung, Lee, Yun Seog, Hannon, James B., Yang, Yang, Sadana, Devendra K., Ross, Frances M., Park, Hongsik, Bae, Sanghoon, Cruz, Samuel Steven, Kim, Yunjo, Kim, Jeehwan
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Published: Proceedings of the National Academy of Sciences 2017
Online Access:http://hdl.handle.net/1721.1/112948
https://orcid.org/0000-0001-9708-595X
https://orcid.org/0000-0001-6803-0247
https://orcid.org/0000-0002-1547-0967

Internet

http://hdl.handle.net/1721.1/112948
https://orcid.org/0000-0001-9708-595X
https://orcid.org/0000-0001-6803-0247
https://orcid.org/0000-0002-1547-0967

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