Near junction thermal management of GaN HEMTs via wafer bonding
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017.
Main Author: | Radway, Robert M |
---|---|
Other Authors: | Tomás Palacios. |
Format: | Thesis |
Language: | eng |
Published: |
Massachusetts Institute of Technology
2018
|
Subjects: | |
Online Access: | http://hdl.handle.net/1721.1/113116 |
Similar Items
-
Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs
by: Piner, Edwin L., et al.
Published: (2010) -
Seamless On-wafer integration of GaN HEMTs and Si(100) MOSFETs
by: Palacios, Tomas, et al.
Published: (2010) -
Compact modeling for GaN HEMT devices
by: Binit Syamal
Published: (2017) -
Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure
by: Surajit Chakraborty, et al.
Published: (2023-09-01) -
Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)
by: Lau, Sien Hui
Published: (2020)