Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size

Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size

We report the characterization of centimeter sized graphene field-effect transistors with ionic gating which enables active frequency and amplitude modulation of terahertz (THz) radiation. Chemical vapour deposited graphene with different grain sizes were studied using THz time-domain spectroscopy....

Full description

Bibliographic Details
Main Authors: Kamboj, Varun S., Braeuninger-Weimer, Philipp, Jessop, David S., Singh, Angadjit, Sibik, Juraj, Ren, Yuan, Hofmann, Stephan, Zeitler, J. Axel, Beere, Harvey E., Ritchie, David A., Kidambi, Piran Ravichandran
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Published: Institute of Electrical and Electronics Engineers (IEEE) 2018
Online Access:http://hdl.handle.net/1721.1/114643
https://orcid.org/0000-0003-1546-5014

Internet

http://hdl.handle.net/1721.1/114643
https://orcid.org/0000-0003-1546-5014

Similar Items