Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size
We report the characterization of centimeter sized graphene field-effect transistors with ionic gating which enables active frequency and amplitude modulation of terahertz (THz) radiation. Chemical vapour deposited graphene with different grain sizes were studied using THz time-domain spectroscopy....
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
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Institute of Electrical and Electronics Engineers (IEEE)
2018
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| Online Access: | http://hdl.handle.net/1721.1/114643 https://orcid.org/0000-0003-1546-5014 |
| _version_ | 1826207233395916800 |
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| author | Kamboj, Varun S. Braeuninger-Weimer, Philipp Jessop, David S. Singh, Angadjit Sibik, Juraj Ren, Yuan Hofmann, Stephan Zeitler, J. Axel Beere, Harvey E. Ritchie, David A. Kidambi, Piran Ravichandran |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Kamboj, Varun S. Braeuninger-Weimer, Philipp Jessop, David S. Singh, Angadjit Sibik, Juraj Ren, Yuan Hofmann, Stephan Zeitler, J. Axel Beere, Harvey E. Ritchie, David A. Kidambi, Piran Ravichandran |
| author_sort | Kamboj, Varun S. |
| collection | MIT |
| description | We report the characterization of centimeter sized graphene field-effect transistors with ionic gating which enables active frequency and amplitude modulation of terahertz (THz) radiation. Chemical vapour deposited graphene with different grain sizes were studied using THz time-domain spectroscopy. We demonstrate that the plasmonic resonances intrinsic to graphene can be tuned over a wide range of THz frequencies by engineering the grain size of the graphene. Further frequency tuning of the resonance, up to ∼65 GHz, is achieved by electrostatic doping via ionic gating. These results present the first demonstration of tuning the intrinsic plasmonic resonances in graphene. |
| first_indexed | 2024-09-23T13:46:08Z |
| format | Article |
| id | mit-1721.1/114643 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T13:46:08Z |
| publishDate | 2018 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1146432022-09-28T16:04:29Z Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size Kamboj, Varun S. Braeuninger-Weimer, Philipp Jessop, David S. Singh, Angadjit Sibik, Juraj Ren, Yuan Hofmann, Stephan Zeitler, J. Axel Beere, Harvey E. Ritchie, David A. Kidambi, Piran Ravichandran Massachusetts Institute of Technology. Department of Mechanical Engineering Kidambi, Piran Ravichandran We report the characterization of centimeter sized graphene field-effect transistors with ionic gating which enables active frequency and amplitude modulation of terahertz (THz) radiation. Chemical vapour deposited graphene with different grain sizes were studied using THz time-domain spectroscopy. We demonstrate that the plasmonic resonances intrinsic to graphene can be tuned over a wide range of THz frequencies by engineering the grain size of the graphene. Further frequency tuning of the resonance, up to ∼65 GHz, is achieved by electrostatic doping via ionic gating. These results present the first demonstration of tuning the intrinsic plasmonic resonances in graphene. Engineering and Physical Sciences Research Council (Grant EP/J017671/1) Engineering and Physical Sciences Research Council (Grant EP/K016636/1-GRAPHTED) 2018-04-09T20:01:10Z 2018-04-09T20:01:10Z 2016-02 2018-03-16T15:58:20Z Article http://purl.org/eprint/type/ConferencePaper http://hdl.handle.net/1721.1/114643 Kamboj, Varun S., et al. "Low-Bias Gate Tunable Terahertz Plasmonic Signatures in Chemical Vapour Deposited Graphene of Varying Grain Size." Proceedings Volume 9747, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX, 13-18 February, 2016, San Francisco, California, edited by Laurence P. Sadwick and Tianxin Yang, 2016, p. 974707. © 2016 SPIE https://orcid.org/0000-0003-1546-5014 http://dx.doi.org/10.1117/12.2209724 Proceedings Volume 9747, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX; Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers (IEEE) SPIE |
| spellingShingle | Kamboj, Varun S. Braeuninger-Weimer, Philipp Jessop, David S. Singh, Angadjit Sibik, Juraj Ren, Yuan Hofmann, Stephan Zeitler, J. Axel Beere, Harvey E. Ritchie, David A. Kidambi, Piran Ravichandran Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size |
| title | Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size |
| title_full | Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size |
| title_fullStr | Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size |
| title_full_unstemmed | Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size |
| title_short | Low-bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size |
| title_sort | low bias gate tunable terahertz plasmonic signatures in chemical vapour deposited graphene of varying grain size |
| url | http://hdl.handle.net/1721.1/114643 https://orcid.org/0000-0003-1546-5014 |
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