Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs

Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs

We provide a detailed study of the oxide- semiconductor interface trap assisted tunneling (TAT) mechanism in tunnel FETs to show how it contributes a major leakage current path before the band-to-band tunneling (BTBT) is initiated. With a modified Shockley-Read-Hall formalism, we show that at room t...

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Bibliographic Details
Main Authors: Sajjad, Redwan Noor, Chern, Winston, Hoyt, Judy L, Antoniadis, Dimitri A
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers (IEEE) 2018
Online Access:http://hdl.handle.net/1721.1/114902
https://orcid.org/0000-0001-8385-0438
https://orcid.org/0000-0002-5452-8009
https://orcid.org/0000-0002-4836-6525

Internet

http://hdl.handle.net/1721.1/114902
https://orcid.org/0000-0001-8385-0438
https://orcid.org/0000-0002-5452-8009
https://orcid.org/0000-0002-4836-6525

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