The 2018 GaN power electronics roadmap

The 2018 GaN power electronics roadmap

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength...

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Bibliographic Details
Main Authors: Amano, H, Baines, Y, Beam, E, Borga, Matteo, Bouchet, T, Chalker, Paul R, Charles, M, Chen, Kevin J, Chowdhury, Nadim, Chu, Rongming, De Santi, Carlo, De Souza, Maria Merlyne, Decoutere, Stefaan, Di Cioccio, L, Eckardt, Bernd, Egawa, Takashi, Fay, P, Freedsman, Joseph J, Guido, L, Häberlen, Oliver, Haynes, Geoff, Heckel, Thomas, Hemakumara, Dilini, Houston, Peter, Hua, Mengyuan, Huang, Qingyun, Huang, Alex, Jiang, Sheng, Kawai, H, Kinzer, Dan, Kuball, Martin, Kumar, Ashwani, Lee, Kean Boon, Li, Xu, Marcon, Denis, März, Martin, McCarthy, R, Meneghesso, Gaudenzio, Meneghini, Matteo, Morvan, E, Nakajima, A, Narayanan, E. M. S., Oliver, Stephen, Plissonnier, M, Reddy, R, Thayne, Iain, Torres, A, Trivellin, Nicola, Unni, V, Uren, Michael J, Van Hove, Marleen, Wallis, David J, Wang, J, Xie, J, Yagi, S, Yang, Shu, Youtsey, C, Yu, Ruiyang, Zanoni, Enrico, Zeltner, Stefan, Hu, Jie, Palacios, Tomas, Piedra, Daniel, Sun, Min, Zhang, Yuhao
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: IOP Publishing 2018
Online Access:http://hdl.handle.net/1721.1/115941
https://orcid.org/0000-0002-2190-563X
https://orcid.org/0000-0002-8104-9097
https://orcid.org/0000-0003-4858-8264
https://orcid.org/0000-0002-2849-5653

Internet

http://hdl.handle.net/1721.1/115941
https://orcid.org/0000-0002-2190-563X
https://orcid.org/0000-0002-8104-9097
https://orcid.org/0000-0003-4858-8264
https://orcid.org/0000-0002-2849-5653

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