The 2018 GaN power electronics roadmap
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength...
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| Format: | Article |
| Language: | en_US |
| Published: |
IOP Publishing
2018
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| Online Access: | http://hdl.handle.net/1721.1/115941 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-2849-5653 |
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| author | Amano, H Baines, Y Beam, E Borga, Matteo Bouchet, T Chalker, Paul R Charles, M Chen, Kevin J Chowdhury, Nadim Chu, Rongming De Santi, Carlo De Souza, Maria Merlyne Decoutere, Stefaan Di Cioccio, L Eckardt, Bernd Egawa, Takashi Fay, P Freedsman, Joseph J Guido, L Häberlen, Oliver Haynes, Geoff Heckel, Thomas Hemakumara, Dilini Houston, Peter Hua, Mengyuan Huang, Qingyun Huang, Alex Jiang, Sheng Kawai, H Kinzer, Dan Kuball, Martin Kumar, Ashwani Lee, Kean Boon Li, Xu Marcon, Denis März, Martin McCarthy, R Meneghesso, Gaudenzio Meneghini, Matteo Morvan, E Nakajima, A Narayanan, E. M. S. Oliver, Stephen Plissonnier, M Reddy, R Thayne, Iain Torres, A Trivellin, Nicola Unni, V Uren, Michael J Van Hove, Marleen Wallis, David J Wang, J Xie, J Yagi, S Yang, Shu Youtsey, C Yu, Ruiyang Zanoni, Enrico Zeltner, Stefan Hu, Jie Palacios, Tomas Piedra, Daniel Sun, Min Zhang, Yuhao |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Amano, H Baines, Y Beam, E Borga, Matteo Bouchet, T Chalker, Paul R Charles, M Chen, Kevin J Chowdhury, Nadim Chu, Rongming De Santi, Carlo De Souza, Maria Merlyne Decoutere, Stefaan Di Cioccio, L Eckardt, Bernd Egawa, Takashi Fay, P Freedsman, Joseph J Guido, L Häberlen, Oliver Haynes, Geoff Heckel, Thomas Hemakumara, Dilini Houston, Peter Hua, Mengyuan Huang, Qingyun Huang, Alex Jiang, Sheng Kawai, H Kinzer, Dan Kuball, Martin Kumar, Ashwani Lee, Kean Boon Li, Xu Marcon, Denis März, Martin McCarthy, R Meneghesso, Gaudenzio Meneghini, Matteo Morvan, E Nakajima, A Narayanan, E. M. S. Oliver, Stephen Plissonnier, M Reddy, R Thayne, Iain Torres, A Trivellin, Nicola Unni, V Uren, Michael J Van Hove, Marleen Wallis, David J Wang, J Xie, J Yagi, S Yang, Shu Youtsey, C Yu, Ruiyang Zanoni, Enrico Zeltner, Stefan Hu, Jie Palacios, Tomas Piedra, Daniel Sun, Min Zhang, Yuhao |
| author_sort | Amano, H |
| collection | MIT |
| description | Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here. |
| first_indexed | 2024-09-23T16:45:50Z |
| format | Article |
| id | mit-1721.1/115941 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T16:45:50Z |
| publishDate | 2018 |
| publisher | IOP Publishing |
| record_format | dspace |
| spelling | mit-1721.1/1159412022-09-29T21:21:49Z The 2018 GaN power electronics roadmap Amano, H Baines, Y Beam, E Borga, Matteo Bouchet, T Chalker, Paul R Charles, M Chen, Kevin J Chowdhury, Nadim Chu, Rongming De Santi, Carlo De Souza, Maria Merlyne Decoutere, Stefaan Di Cioccio, L Eckardt, Bernd Egawa, Takashi Fay, P Freedsman, Joseph J Guido, L Häberlen, Oliver Haynes, Geoff Heckel, Thomas Hemakumara, Dilini Houston, Peter Hua, Mengyuan Huang, Qingyun Huang, Alex Jiang, Sheng Kawai, H Kinzer, Dan Kuball, Martin Kumar, Ashwani Lee, Kean Boon Li, Xu Marcon, Denis März, Martin McCarthy, R Meneghesso, Gaudenzio Meneghini, Matteo Morvan, E Nakajima, A Narayanan, E. M. S. Oliver, Stephen Plissonnier, M Reddy, R Thayne, Iain Torres, A Trivellin, Nicola Unni, V Uren, Michael J Van Hove, Marleen Wallis, David J Wang, J Xie, J Yagi, S Yang, Shu Youtsey, C Yu, Ruiyang Zanoni, Enrico Zeltner, Stefan Hu, Jie Palacios, Tomas Piedra, Daniel Sun, Min Zhang, Yuhao Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Zhang, Yuhao Hu, Jie Palacios, Tomas Piedra, Daniel Sun, Min Zhang, Yuhao Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here. 2018-05-29T18:21:17Z 2018-05-29T18:21:17Z 2018-03 2017-10 Article http://purl.org/eprint/type/JournalArticle 0022-3727 1361-6463 http://hdl.handle.net/1721.1/115941 Amano, H et al. “The 2018 GaN Power Electronics Roadmap.” Journal of Physics D: Applied Physics 51, 16 (March 2018): 163001 © 2018 IOP Publishing Ltd https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-2849-5653 en_US https://doi.org/10.1088/1361-6463/aaaf9d Journal of Physics D: Applied Physics Creative Commons Attribution 3.0 Unported license http://creativecommons.org/licenses/by/3.0/ application/pdf IOP Publishing Zhang, Yuhao |
| spellingShingle | Amano, H Baines, Y Beam, E Borga, Matteo Bouchet, T Chalker, Paul R Charles, M Chen, Kevin J Chowdhury, Nadim Chu, Rongming De Santi, Carlo De Souza, Maria Merlyne Decoutere, Stefaan Di Cioccio, L Eckardt, Bernd Egawa, Takashi Fay, P Freedsman, Joseph J Guido, L Häberlen, Oliver Haynes, Geoff Heckel, Thomas Hemakumara, Dilini Houston, Peter Hua, Mengyuan Huang, Qingyun Huang, Alex Jiang, Sheng Kawai, H Kinzer, Dan Kuball, Martin Kumar, Ashwani Lee, Kean Boon Li, Xu Marcon, Denis März, Martin McCarthy, R Meneghesso, Gaudenzio Meneghini, Matteo Morvan, E Nakajima, A Narayanan, E. M. S. Oliver, Stephen Plissonnier, M Reddy, R Thayne, Iain Torres, A Trivellin, Nicola Unni, V Uren, Michael J Van Hove, Marleen Wallis, David J Wang, J Xie, J Yagi, S Yang, Shu Youtsey, C Yu, Ruiyang Zanoni, Enrico Zeltner, Stefan Hu, Jie Palacios, Tomas Piedra, Daniel Sun, Min Zhang, Yuhao The 2018 GaN power electronics roadmap |
| title | The 2018 GaN power electronics roadmap |
| title_full | The 2018 GaN power electronics roadmap |
| title_fullStr | The 2018 GaN power electronics roadmap |
| title_full_unstemmed | The 2018 GaN power electronics roadmap |
| title_short | The 2018 GaN power electronics roadmap |
| title_sort | 2018 gan power electronics roadmap |
| url | http://hdl.handle.net/1721.1/115941 https://orcid.org/0000-0002-2190-563X https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-2849-5653 |
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