Trench formation and corner rounding in vertical GaN power devices
Trench formation and corner rounding are the key processes to demonstrate high-voltage trenchbased vertical GaN devices. In this work, we developed a damage-free corner rounding technology combining Tetramethylammonium hydroxide wet etching and piranha clean. By optimizing the inductively coupled pl...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2018
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| Online Access: | http://hdl.handle.net/1721.1/116060 https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0002-2190-563X |