Trench formation and corner rounding in vertical GaN power devices
Trench formation and corner rounding are the key processes to demonstrate high-voltage trenchbased vertical GaN devices. In this work, we developed a damage-free corner rounding technology combining Tetramethylammonium hydroxide wet etching and piranha clean. By optimizing the inductively coupled pl...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2018
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| Online Access: | http://hdl.handle.net/1721.1/116060 https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0002-2190-563X |
| _version_ | 1826196927694241792 |
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| author | Liu, Zhihong Gao, Xiang Zhang, Yuhao Sun, Min Piedra, Daniel Hu, Jie Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Liu, Zhihong Gao, Xiang Zhang, Yuhao Sun, Min Piedra, Daniel Hu, Jie Palacios, Tomas |
| author_sort | Liu, Zhihong |
| collection | MIT |
| description | Trench formation and corner rounding are the key processes to demonstrate high-voltage trenchbased vertical GaN devices. In this work, we developed a damage-free corner rounding technology combining Tetramethylammonium hydroxide wet etching and piranha clean. By optimizing the inductively coupled plasma dry etching conditions and applying the rounding technology, two main trench shapes were demonstrated: flat-bottom rounded trench and tapered-bottom rounded trench. TCAD simulations were then performed to investigate the impact of trench shapes and round corners on device blocking capability. GaN trench metal-insulator-semiconductor barrier Schottky rectifiers with different trench shapes were fabricated and characterized. A breakdown voltage over 500V was obtained in the device with flat-bottom rounded trenches, compared to 350V in the device with tapered-bottom rounded trenches and 150V in the device with nonrounded trenches. Both experimental and simulation results support the use of rounded flat-bottom trenches to fabricate high-voltage GaN trench-based power devices. |
| first_indexed | 2024-09-23T10:40:11Z |
| format | Article |
| id | mit-1721.1/116060 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T10:40:11Z |
| publishDate | 2018 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/1160602022-09-30T22:09:19Z Trench formation and corner rounding in vertical GaN power devices Liu, Zhihong Gao, Xiang Zhang, Yuhao Sun, Min Piedra, Daniel Hu, Jie Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Zhang, Yuhao Zhang, Yuhao Sun, Min Piedra, Daniel Hu, Jie Palacios, Tomas Trench formation and corner rounding are the key processes to demonstrate high-voltage trenchbased vertical GaN devices. In this work, we developed a damage-free corner rounding technology combining Tetramethylammonium hydroxide wet etching and piranha clean. By optimizing the inductively coupled plasma dry etching conditions and applying the rounding technology, two main trench shapes were demonstrated: flat-bottom rounded trench and tapered-bottom rounded trench. TCAD simulations were then performed to investigate the impact of trench shapes and round corners on device blocking capability. GaN trench metal-insulator-semiconductor barrier Schottky rectifiers with different trench shapes were fabricated and characterized. A breakdown voltage over 500V was obtained in the device with flat-bottom rounded trenches, compared to 350V in the device with tapered-bottom rounded trenches and 150V in the device with nonrounded trenches. Both experimental and simulation results support the use of rounded flat-bottom trenches to fabricate high-voltage GaN trench-based power devices. 2018-06-04T17:24:01Z 2018-06-04T17:24:01Z 2017-05 2017-02 Article http://purl.org/eprint/type/JournalArticle 0003-6951 1077-3118 http://hdl.handle.net/1721.1/116060 Zhang, Yuhao et al. “Trench Formation and Corner Rounding in Vertical GaN Power Devices.” Applied Physics Letters 110, 19 (May 2017): 193506 https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0002-2190-563X en_US https://doi.org/10.1063/1.4983558 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) Zhang, Yuhao |
| spellingShingle | Liu, Zhihong Gao, Xiang Zhang, Yuhao Sun, Min Piedra, Daniel Hu, Jie Palacios, Tomas Trench formation and corner rounding in vertical GaN power devices |
| title | Trench formation and corner rounding in vertical GaN power devices |
| title_full | Trench formation and corner rounding in vertical GaN power devices |
| title_fullStr | Trench formation and corner rounding in vertical GaN power devices |
| title_full_unstemmed | Trench formation and corner rounding in vertical GaN power devices |
| title_short | Trench formation and corner rounding in vertical GaN power devices |
| title_sort | trench formation and corner rounding in vertical gan power devices |
| url | http://hdl.handle.net/1721.1/116060 https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0002-2190-563X |
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