A multi-state memory device based on the unidirectional spin Hall magnetoresistance

A multi-state memory device based on the unidirectional spin Hall magnetoresistance

We report on a memory device concept based on the recently discovered unidirectional spin Hall magnetoresistance (USMR), which can store multiple bits of information in a single ferromagnetic heterostructure. We show that the USMR with possible contribution of Joule heating-driven magnetothermal eff...

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Bibliographic Details
Main Authors: Gambardella, Pietro, Avci, Can Onur, Mann, Maxwell, Tan, Aik Jun, Beach, Geoffrey Stephen
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Published: AIP Publishing 2018
Online Access:http://hdl.handle.net/1721.1/116341
https://orcid.org/0000-0002-8719-2652
https://orcid.org/0000-0002-6858-8424

Internet

http://hdl.handle.net/1721.1/116341
https://orcid.org/0000-0002-8719-2652
https://orcid.org/0000-0002-6858-8424

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