Large and persistent photoconductivity due to hole-hole correlation in CdS
Large and persistent photoconductivity (LPPC) in semiconductors is due to the trapping of photogenerated minority carriers at crystal defects. Theory has suggested that anion vacancies in II-VI semiconductors are responsible for LPPC due to negative-U behavior, whereby two minority carriers become k...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2018
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| Online Access: | http://hdl.handle.net/1721.1/117334 https://orcid.org/0000-0001-6507-5140 https://orcid.org/0000-0003-3116-6719 |