High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconn...

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Bibliographic Details
Main Authors: Gao, Yuanda, Robertson, Alexander D., Assefa, Solomon, Koppens, Frank H. L., Hone, James, Shiue, Ren-Jye, Wang, Yifei, Peng, Cheng, Efetov, Dmitri, Englund, Dirk R.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Published: American Chemical Society (ACS) 2018
Online Access:http://hdl.handle.net/1721.1/117761
https://orcid.org/0000-0002-4363-3081
https://orcid.org/0000-0003-0308-3262
https://orcid.org/0000-0001-5862-0462

Internet

http://hdl.handle.net/1721.1/117761
https://orcid.org/0000-0002-4363-3081
https://orcid.org/0000-0003-0308-3262
https://orcid.org/0000-0001-5862-0462

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