High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit
Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconn...
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American Chemical Society (ACS)
2018
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| Online Access: | http://hdl.handle.net/1721.1/117761 https://orcid.org/0000-0002-4363-3081 https://orcid.org/0000-0003-0308-3262 https://orcid.org/0000-0001-5862-0462 |
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| author | Gao, Yuanda Robertson, Alexander D. Assefa, Solomon Koppens, Frank H. L. Hone, James Shiue, Ren-Jye Wang, Yifei Peng, Cheng Efetov, Dmitri Englund, Dirk R. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Gao, Yuanda Robertson, Alexander D. Assefa, Solomon Koppens, Frank H. L. Hone, James Shiue, Ren-Jye Wang, Yifei Peng, Cheng Efetov, Dmitri Englund, Dirk R. |
| author_sort | Gao, Yuanda |
| collection | MIT |
| description | Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers. Keywords: autocorrelators; boron nitride; graphene; optoelectronics; photodetectors; silicon photonics |
| first_indexed | 2024-09-23T13:39:09Z |
| format | Article |
| id | mit-1721.1/117761 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T13:39:09Z |
| publishDate | 2018 |
| publisher | American Chemical Society (ACS) |
| record_format | dspace |
| spelling | mit-1721.1/1177612022-10-01T16:19:15Z High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit Gao, Yuanda Robertson, Alexander D. Assefa, Solomon Koppens, Frank H. L. Hone, James Shiue, Ren-Jye Wang, Yifei Peng, Cheng Efetov, Dmitri Englund, Dirk R. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Shiue, Ren-Jye Wang, Yifei Peng, Cheng Efetov, Dmitri Englund, Dirk R. Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers. Keywords: autocorrelators; boron nitride; graphene; optoelectronics; photodetectors; silicon photonics United States. Office of Naval Research (Award N00014-13-1-0662) United States. Office of Naval Research (Award N00014-14-1-0349) 2018-09-14T16:07:39Z 2018-09-14T16:07:39Z 2015-11 2015-06 2018-09-14T15:56:32Z Article http://purl.org/eprint/type/JournalArticle 1530-6984 1530-6992 http://hdl.handle.net/1721.1/117761 Shiue, Ren-Jye et al. “High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.” Nano Letters 15, 11 (October 2015): 7288–7293 © 2015 American Chemical Society https://orcid.org/0000-0002-4363-3081 https://orcid.org/0000-0003-0308-3262 https://orcid.org/0000-0001-5862-0462 http://dx.doi.org/10.1021/ACS.NANOLETT.5B02368 Nano Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Chemical Society (ACS) arXiv |
| spellingShingle | Gao, Yuanda Robertson, Alexander D. Assefa, Solomon Koppens, Frank H. L. Hone, James Shiue, Ren-Jye Wang, Yifei Peng, Cheng Efetov, Dmitri Englund, Dirk R. High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit |
| title | High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit |
| title_full | High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit |
| title_fullStr | High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit |
| title_full_unstemmed | High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit |
| title_short | High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit |
| title_sort | high responsivity graphene boron nitride photodetector and autocorrelator in a silicon photonic integrated circuit |
| url | http://hdl.handle.net/1721.1/117761 https://orcid.org/0000-0002-4363-3081 https://orcid.org/0000-0003-0308-3262 https://orcid.org/0000-0001-5862-0462 |
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