High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit
Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconn...
Main Authors: | Gao, Yuanda, Robertson, Alexander D., Assefa, Solomon, Koppens, Frank H. L., Hone, James, Shiue, Ren-Jye, Wang, Yifei, Peng, Cheng, Efetov, Dmitri, Englund, Dirk R. |
---|---|
Other Authors: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
Format: | Article |
Published: |
American Chemical Society (ACS)
2018
|
Online Access: | http://hdl.handle.net/1721.1/117761 https://orcid.org/0000-0002-4363-3081 https://orcid.org/0000-0003-0308-3262 https://orcid.org/0000-0001-5862-0462 |
Similar Items
-
High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity
by: Gao, Yuanda, et al.
Published: (2018) -
Thermal radiation control from hot graphene electrons coupled to a photonic crystal nanocavity
by: Shiue, Ren-Jye, et al.
Published: (2020) -
Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride
by: Ali, Sajid, et al.
Published: (2017) -
Active 2D materials for on-chip nanophotonics and quantum optics
by: Fong, Kin Chung, et al.
Published: (2018) -
Enhanced photodetection in graphene-integrated photonic crystal cavity
by: Shiue, Ren-Jye, et al.
Published: (2014)