Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb

Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb

Through first-principles calculations, the phonon-limited transport properties of cubic boron-V compounds (BP, BAs, and BSb) are studied. We find that the high optical phonon frequency in these compounds leads to the substantial suppression of polar scattering and the reduction of intervalley transi...

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Bibliographic Details
Main Authors: Liu, Te Huan, Song, Bai, Meroueh, Laureen, Ding, Zhiwei, Song, Qichen, Zhou, Jiawei, Li, Mingda, Chen, Gang
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Language:English
Published: American Physical Society 2018
Online Access:http://hdl.handle.net/1721.1/118150
https://orcid.org/0000-0002-1157-8540
https://orcid.org/0000-0003-3013-9831
https://orcid.org/0000-0001-5799-5852
https://orcid.org/0000-0002-2612-7750
https://orcid.org/0000-0002-1090-4068
https://orcid.org/0000-0002-9872-5688
https://orcid.org/0000-0002-7055-6368
https://orcid.org/0000-0002-3968-8530

Internet

http://hdl.handle.net/1721.1/118150
https://orcid.org/0000-0002-1157-8540
https://orcid.org/0000-0003-3013-9831
https://orcid.org/0000-0001-5799-5852
https://orcid.org/0000-0002-2612-7750
https://orcid.org/0000-0002-1090-4068
https://orcid.org/0000-0002-9872-5688
https://orcid.org/0000-0002-7055-6368
https://orcid.org/0000-0002-3968-8530

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