Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb
Through first-principles calculations, the phonon-limited transport properties of cubic boron-V compounds (BP, BAs, and BSb) are studied. We find that the high optical phonon frequency in these compounds leads to the substantial suppression of polar scattering and the reduction of intervalley transi...
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| Format: | Article |
| Language: | English |
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American Physical Society
2018
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| Online Access: | http://hdl.handle.net/1721.1/118150 https://orcid.org/0000-0002-1157-8540 https://orcid.org/0000-0003-3013-9831 https://orcid.org/0000-0001-5799-5852 https://orcid.org/0000-0002-2612-7750 https://orcid.org/0000-0002-1090-4068 https://orcid.org/0000-0002-9872-5688 https://orcid.org/0000-0002-7055-6368 https://orcid.org/0000-0002-3968-8530 |
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| author | Liu, Te Huan Song, Bai Meroueh, Laureen Ding, Zhiwei Song, Qichen Zhou, Jiawei Li, Mingda Chen, Gang |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Liu, Te Huan Song, Bai Meroueh, Laureen Ding, Zhiwei Song, Qichen Zhou, Jiawei Li, Mingda Chen, Gang |
| author_sort | Liu, Te Huan |
| collection | MIT |
| description | Through first-principles calculations, the phonon-limited transport properties of cubic boron-V compounds (BP, BAs, and BSb) are studied. We find that the high optical phonon frequency in these compounds leads to the substantial suppression of polar scattering and the reduction of intervalley transition mediated by large-wave-vector optical phonons, both of which significantly facilitate charge transport. We also discover that BAs simultaneously has a high hole mobility (2110cm[superscript 2]/Vs) and electron mobility (1400cm[superscript 2]/Vs) at room temperature, which is rare in semiconductors. Our findings present insight into searching high mobility polar semiconductors, and point to BAs as a promising material for electronic and photovoltaic devices in addition to its predicted high thermal conductivity. |
| first_indexed | 2024-09-23T11:25:50Z |
| format | Article |
| id | mit-1721.1/118150 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T11:25:50Z |
| publishDate | 2018 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | mit-1721.1/1181502022-09-27T19:28:04Z Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb Liu, Te Huan Song, Bai Meroueh, Laureen Ding, Zhiwei Song, Qichen Zhou, Jiawei Li, Mingda Chen, Gang Massachusetts Institute of Technology. Department of Mechanical Engineering Massachusetts Institute of Technology. Department of Nuclear Science and Engineering Liu, Te Huan Song, Bai Meroueh, Laureen Ding, Zhiwei Song, Qichen Zhou, Jiawei Li, Mingda Chen, Gang Through first-principles calculations, the phonon-limited transport properties of cubic boron-V compounds (BP, BAs, and BSb) are studied. We find that the high optical phonon frequency in these compounds leads to the substantial suppression of polar scattering and the reduction of intervalley transition mediated by large-wave-vector optical phonons, both of which significantly facilitate charge transport. We also discover that BAs simultaneously has a high hole mobility (2110cm[superscript 2]/Vs) and electron mobility (1400cm[superscript 2]/Vs) at room temperature, which is rare in semiconductors. Our findings present insight into searching high mobility polar semiconductors, and point to BAs as a promising material for electronic and photovoltaic devices in addition to its predicted high thermal conductivity. United States. Office of Naval Research. Multidisciplinary University Research Initiative (Grant N00014-16-1-2436) 2018-09-19T14:02:03Z 2018-09-19T14:02:03Z 2018-08 2018-07 2018-08-27T18:00:17Z Article http://purl.org/eprint/type/JournalArticle 2469-9950 2469-9969 http://hdl.handle.net/1721.1/118150 Liu, Te-Huan, et al. “Simultaneously High Electron and Hole Mobilities in Cubic Boron-V Compounds: BP, BAs, and BSb.” Physical Review B, vol. 98, no. 8, Aug. 2018. © 2018 American Physical Society https://orcid.org/0000-0002-1157-8540 https://orcid.org/0000-0003-3013-9831 https://orcid.org/0000-0001-5799-5852 https://orcid.org/0000-0002-2612-7750 https://orcid.org/0000-0002-1090-4068 https://orcid.org/0000-0002-9872-5688 https://orcid.org/0000-0002-7055-6368 https://orcid.org/0000-0002-3968-8530 en http://dx.doi.org/10.1103/PhysRevB.98.081203 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. American Physical Society application/pdf American Physical Society American Physical Society |
| spellingShingle | Liu, Te Huan Song, Bai Meroueh, Laureen Ding, Zhiwei Song, Qichen Zhou, Jiawei Li, Mingda Chen, Gang Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb |
| title | Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb |
| title_full | Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb |
| title_fullStr | Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb |
| title_full_unstemmed | Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb |
| title_short | Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb |
| title_sort | simultaneously high electron and hole mobilities in cubic boron v compounds bp bas and bsb |
| url | http://hdl.handle.net/1721.1/118150 https://orcid.org/0000-0002-1157-8540 https://orcid.org/0000-0003-3013-9831 https://orcid.org/0000-0001-5799-5852 https://orcid.org/0000-0002-2612-7750 https://orcid.org/0000-0002-1090-4068 https://orcid.org/0000-0002-9872-5688 https://orcid.org/0000-0002-7055-6368 https://orcid.org/0000-0002-3968-8530 |
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