Exceptional gettering response of epitaxially grown kerfless silicon

Exceptional gettering response of epitaxially grown kerfless silicon

The bulk minority-carrier lifetime in p-And n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500× during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gette...

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Bibliographic Details
Main Authors: Markevich, V. P., Castellanos, S., Lai, B., Peaker, A. R., Buonassisi, T., Powell, Douglas Michael, Hofstetter, Jasmin, Jensen, Mallory Ann, Morishige, Ashley Elizabeth
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Published: American Institute of Physics (AIP) 2018
Online Access:http://hdl.handle.net/1721.1/118899
https://orcid.org/0000-0002-5353-0780
https://orcid.org/0000-0001-9352-8741

Internet

http://hdl.handle.net/1721.1/118899
https://orcid.org/0000-0002-5353-0780
https://orcid.org/0000-0001-9352-8741

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