Synchrotron-based analysis of chromium distributions in multicrystalline silicon for solar cells

Chromium (Cr) can degrade silicon wafer-based solar cell efficiencies at concentrations as low as 10¹⁰cm⁻³. In this contribution, we employ synchrotron-based X-ray fluorescence microscopy to study chromium distributions in multicrystalline silicon in as-grown material and after phosphorous diffusion...

Full description

Bibliographic Details
Main Authors: Coletti, Gianluca, Lai, Barry, Jensen, Mallory Ann, Hofstetter, Jasmin, Morishige, Ashley Elizabeth, Fenning, David P, Buonassisi, Anthony
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Published: American Institute of Physics (AIP) 2018
Online Access:http://hdl.handle.net/1721.1/118922
https://orcid.org/0000-0002-5353-0780
https://orcid.org/0000-0001-9352-8741
https://orcid.org/0000-0002-4609-9312
https://orcid.org/0000-0001-8345-4937
_version_ 1826193397451325440
author Coletti, Gianluca
Lai, Barry
Jensen, Mallory Ann
Hofstetter, Jasmin
Morishige, Ashley Elizabeth
Fenning, David P
Buonassisi, Anthony
author2 Massachusetts Institute of Technology. Department of Mechanical Engineering
author_facet Massachusetts Institute of Technology. Department of Mechanical Engineering
Coletti, Gianluca
Lai, Barry
Jensen, Mallory Ann
Hofstetter, Jasmin
Morishige, Ashley Elizabeth
Fenning, David P
Buonassisi, Anthony
author_sort Coletti, Gianluca
collection MIT
description Chromium (Cr) can degrade silicon wafer-based solar cell efficiencies at concentrations as low as 10¹⁰cm⁻³. In this contribution, we employ synchrotron-based X-ray fluorescence microscopy to study chromium distributions in multicrystalline silicon in as-grown material and after phosphorous diffusion. We complement quantified precipitate size and spatial distribution with interstitial Cr concentration and minority carrier lifetime measurements to provide insight into chromium gettering kinetics and offer suggestions for minimizing the device impacts of chromium. We observe that Cr-rich precipitates in as-grown material are generally smaller than iron-rich precipitates and that Cr[subscript i] point defects account for only one-half of the total Cr in the as-grown material. This observation is consistent with previous hypotheses that Cr transport and CrSi₂ growth are more strongly diffusion-limited during ingot cooling. We apply two phosphorous diffusion gettering profiles that both increase minority carrier lifetime by two orders of magnitude and reduce [Cr[subscript i]] by three orders of magnitude to 10¹⁰cm⁻³. Some Cr-rich precipitates persist after both processes, and locally high [Cr[subscript i]] after the high-temperature process indicates that further optimization of the chromium gettering profile is possible.
first_indexed 2024-09-23T09:38:25Z
format Article
id mit-1721.1/118922
institution Massachusetts Institute of Technology
last_indexed 2024-09-23T09:38:25Z
publishDate 2018
publisher American Institute of Physics (AIP)
record_format dspace
spelling mit-1721.1/1189222022-09-26T12:48:18Z Synchrotron-based analysis of chromium distributions in multicrystalline silicon for solar cells Coletti, Gianluca Lai, Barry Jensen, Mallory Ann Hofstetter, Jasmin Morishige, Ashley Elizabeth Fenning, David P Buonassisi, Anthony Massachusetts Institute of Technology. Department of Mechanical Engineering Jensen, Mallory Ann Hofstetter, Jasmin Morishige, Ashley Elizabeth Fenning, David P Buonassisi, Anthony Chromium (Cr) can degrade silicon wafer-based solar cell efficiencies at concentrations as low as 10¹⁰cm⁻³. In this contribution, we employ synchrotron-based X-ray fluorescence microscopy to study chromium distributions in multicrystalline silicon in as-grown material and after phosphorous diffusion. We complement quantified precipitate size and spatial distribution with interstitial Cr concentration and minority carrier lifetime measurements to provide insight into chromium gettering kinetics and offer suggestions for minimizing the device impacts of chromium. We observe that Cr-rich precipitates in as-grown material are generally smaller than iron-rich precipitates and that Cr[subscript i] point defects account for only one-half of the total Cr in the as-grown material. This observation is consistent with previous hypotheses that Cr transport and CrSi₂ growth are more strongly diffusion-limited during ingot cooling. We apply two phosphorous diffusion gettering profiles that both increase minority carrier lifetime by two orders of magnitude and reduce [Cr[subscript i]] by three orders of magnitude to 10¹⁰cm⁻³. Some Cr-rich precipitates persist after both processes, and locally high [Cr[subscript i]] after the high-temperature process indicates that further optimization of the chromium gettering profile is possible. United States. Department of Energy (Contract DE-EE0005314) National Science Foundation (U.S.) (Contract EEC-1041895) United States. Department of Energy (Contract EEC-1041895) National Science Foundation (U.S.) (Grant 1122374) 2018-11-06T17:27:03Z 2018-11-06T17:27:03Z 2015-05 2015-04 2018-10-31T15:53:52Z Article http://purl.org/eprint/type/JournalArticle 0003-6951 1077-3118 http://hdl.handle.net/1721.1/118922 Jensen, Mallory Ann et al. “Synchrotron-Based Analysis of Chromium Distributions in Multicrystalline Silicon for Solar Cells.” Applied Physics Letters 106, 20 (May 2015): 202104 © 2015 AIP Publishing LLC https://orcid.org/0000-0002-5353-0780 https://orcid.org/0000-0001-9352-8741 https://orcid.org/0000-0002-4609-9312 https://orcid.org/0000-0001-8345-4937 http://dx.doi.org/10.1063/1.4921619 Applied Physics Letters Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf American Institute of Physics (AIP) Other repository
spellingShingle Coletti, Gianluca
Lai, Barry
Jensen, Mallory Ann
Hofstetter, Jasmin
Morishige, Ashley Elizabeth
Fenning, David P
Buonassisi, Anthony
Synchrotron-based analysis of chromium distributions in multicrystalline silicon for solar cells
title Synchrotron-based analysis of chromium distributions in multicrystalline silicon for solar cells
title_full Synchrotron-based analysis of chromium distributions in multicrystalline silicon for solar cells
title_fullStr Synchrotron-based analysis of chromium distributions in multicrystalline silicon for solar cells
title_full_unstemmed Synchrotron-based analysis of chromium distributions in multicrystalline silicon for solar cells
title_short Synchrotron-based analysis of chromium distributions in multicrystalline silicon for solar cells
title_sort synchrotron based analysis of chromium distributions in multicrystalline silicon for solar cells
url http://hdl.handle.net/1721.1/118922
https://orcid.org/0000-0002-5353-0780
https://orcid.org/0000-0001-9352-8741
https://orcid.org/0000-0002-4609-9312
https://orcid.org/0000-0001-8345-4937
work_keys_str_mv AT colettigianluca synchrotronbasedanalysisofchromiumdistributionsinmulticrystallinesiliconforsolarcells
AT laibarry synchrotronbasedanalysisofchromiumdistributionsinmulticrystallinesiliconforsolarcells
AT jensenmalloryann synchrotronbasedanalysisofchromiumdistributionsinmulticrystallinesiliconforsolarcells
AT hofstetterjasmin synchrotronbasedanalysisofchromiumdistributionsinmulticrystallinesiliconforsolarcells
AT morishigeashleyelizabeth synchrotronbasedanalysisofchromiumdistributionsinmulticrystallinesiliconforsolarcells
AT fenningdavidp synchrotronbasedanalysisofchromiumdistributionsinmulticrystallinesiliconforsolarcells
AT buonassisianthony synchrotronbasedanalysisofchromiumdistributionsinmulticrystallinesiliconforsolarcells