Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length....

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Bibliographic Details
Main Authors: Vahanissi, Ville, Liu, Zhengjun, Huang, Haibing, Magana, Ernesto, Khelifati, Nabil, Husein, Sebastian, Lai, Barry, Bouhafs, Djoudi, Laine, Hannu, Morishige, Ashley Elizabeth, Bertoni, Mariana I, Buonassisi, Anthony, Fenning, David P, Savin, Hele Irene
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Published: Institute of Electrical and Electronics Engineers (IEEE) 2018
Online Access:http://hdl.handle.net/1721.1/119178
https://orcid.org/0000-0001-9352-8741
https://orcid.org/0000-0001-8345-4937
https://orcid.org/0000-0002-4609-9312

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http://hdl.handle.net/1721.1/119178
https://orcid.org/0000-0001-9352-8741
https://orcid.org/0000-0001-8345-4937
https://orcid.org/0000-0002-4609-9312

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