Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering
Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length....
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| Format: | Article |
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Institute of Electrical and Electronics Engineers (IEEE)
2018
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| Online Access: | http://hdl.handle.net/1721.1/119178 https://orcid.org/0000-0001-9352-8741 https://orcid.org/0000-0001-8345-4937 https://orcid.org/0000-0002-4609-9312 |
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| author | Vahanissi, Ville Liu, Zhengjun Huang, Haibing Magana, Ernesto Khelifati, Nabil Husein, Sebastian Lai, Barry Bouhafs, Djoudi Laine, Hannu Morishige, Ashley Elizabeth Bertoni, Mariana I Buonassisi, Anthony Fenning, David P Savin, Hele Irene |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Vahanissi, Ville Liu, Zhengjun Huang, Haibing Magana, Ernesto Khelifati, Nabil Husein, Sebastian Lai, Barry Bouhafs, Djoudi Laine, Hannu Morishige, Ashley Elizabeth Bertoni, Mariana I Buonassisi, Anthony Fenning, David P Savin, Hele Irene |
| author_sort | Vahanissi, Ville |
| collection | MIT |
| description | Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer. |
| first_indexed | 2024-09-23T09:00:49Z |
| format | Article |
| id | mit-1721.1/119178 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T09:00:49Z |
| publishDate | 2018 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1191782022-09-26T09:50:02Z Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering Vahanissi, Ville Liu, Zhengjun Huang, Haibing Magana, Ernesto Khelifati, Nabil Husein, Sebastian Lai, Barry Bouhafs, Djoudi Laine, Hannu Morishige, Ashley Elizabeth Bertoni, Mariana I Buonassisi, Anthony Fenning, David P Savin, Hele Irene Massachusetts Institute of Technology. Department of Mechanical Engineering Laine, Hannu Morishige, Ashley Elizabeth Bertoni, Mariana I Buonassisi, Anthony Fenning, David P Savin, Hele Irene Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer. United States. Department of Energy. Office of Basic Energy Sciences (Contract No. DE-AC02-06CH11357) National Science Foundation (U.S.) (CA No. EEC-1041895) Finnish Cultural Foundation Fulbright-Technology Industries of Finland Grant University of California, San Diego. Start Up Funds 2018-11-19T14:27:49Z 2018-11-19T14:27:49Z 2016-06 2018-11-01T14:05:35Z Article http://purl.org/eprint/type/ConferencePaper 978-1-5090-2724-8 http://hdl.handle.net/1721.1/119178 Laine, Hannu S., Ville Vahanissi, Zhengjun Liu, Haibing Huang, Ernesto Magana, Ashley E. Morishige, Nabil Khelifati, et al. “Finite- Vs. Infinite-Source Emitters in Silicon Photovoltaics: Effect on Transition Metal Gettering.” 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) (June 2016). https://orcid.org/0000-0001-9352-8741 https://orcid.org/0000-0001-8345-4937 https://orcid.org/0000-0002-4609-9312 http://dx.doi.org/10.1109/PVSC.2016.7749686 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Other repository |
| spellingShingle | Vahanissi, Ville Liu, Zhengjun Huang, Haibing Magana, Ernesto Khelifati, Nabil Husein, Sebastian Lai, Barry Bouhafs, Djoudi Laine, Hannu Morishige, Ashley Elizabeth Bertoni, Mariana I Buonassisi, Anthony Fenning, David P Savin, Hele Irene Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering |
| title | Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering |
| title_full | Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering |
| title_fullStr | Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering |
| title_full_unstemmed | Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering |
| title_short | Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering |
| title_sort | finite vs infinite source emitters in silicon photovoltaics effect on transition metal gettering |
| url | http://hdl.handle.net/1721.1/119178 https://orcid.org/0000-0001-9352-8741 https://orcid.org/0000-0001-8345-4937 https://orcid.org/0000-0002-4609-9312 |
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