Measurement of contact resistivity at metal-tin sulfide (SnS) interfaces
We measured the contact resistivity between tin(II) sulfide (SnS) thin films and three different metals (Au, Mo, and Ti) using a transmission line method (TLM). The contact resistance increases in the order Au < Mo < Ti. The contact resistances for Au and Mo are low enough so that they do not...
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| Format: | Article |
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AIP Publishing
2018
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| Online Access: | http://hdl.handle.net/1721.1/119181 https://orcid.org/0000-0003-2785-552X https://orcid.org/0000-0001-8345-4937 |
| _version_ | 1811080244269940736 |
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| author | Yang, Chuanxi Sun, Leizhi Kim, Sang Bok Feng, Jun Gordon, Roy G. Brandt, Riley E Zhao, Xizhu Buonassisi, Anthony |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Yang, Chuanxi Sun, Leizhi Kim, Sang Bok Feng, Jun Gordon, Roy G. Brandt, Riley E Zhao, Xizhu Buonassisi, Anthony |
| author_sort | Yang, Chuanxi |
| collection | MIT |
| description | We measured the contact resistivity between tin(II) sulfide (SnS) thin films and three different metals (Au, Mo, and Ti) using a transmission line method (TLM). The contact resistance increases in the order Au < Mo < Ti. The contact resistances for Au and Mo are low enough so that they do not significantly decrease the efficiency of solar cells based on SnS as an absorber. On the other hand, the contact resistance of Ti to SnS is sufficiently high that it would decrease the efficiency of a SnS solar cell using Ti as a back contact metal. We further estimate the barrier heights of the junctions between these metals and tin sulfide using temperature-dependent TLM measurements. The barrier heights of these three metals lie in a narrow range of 0.23-0.26 eV, despite their large differences in work function. This Fermi level pinning effect is consistent with the large dielectric constant of SnS, and comparable to Fermi-level pinning on Si. The contact resistivity between annealed SnS films and Mo substrates under light illumination is as low as 0.1 Ω cm2. |
| first_indexed | 2024-09-23T11:28:07Z |
| format | Article |
| id | mit-1721.1/119181 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T11:28:07Z |
| publishDate | 2018 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | mit-1721.1/1191812022-10-01T03:52:30Z Measurement of contact resistivity at metal-tin sulfide (SnS) interfaces Yang, Chuanxi Sun, Leizhi Kim, Sang Bok Feng, Jun Gordon, Roy G. Brandt, Riley E Zhao, Xizhu Buonassisi, Anthony Massachusetts Institute of Technology. Department of Mechanical Engineering Brandt, Riley E Zhao, Xizhu Buonassisi, Anthony We measured the contact resistivity between tin(II) sulfide (SnS) thin films and three different metals (Au, Mo, and Ti) using a transmission line method (TLM). The contact resistance increases in the order Au < Mo < Ti. The contact resistances for Au and Mo are low enough so that they do not significantly decrease the efficiency of solar cells based on SnS as an absorber. On the other hand, the contact resistance of Ti to SnS is sufficiently high that it would decrease the efficiency of a SnS solar cell using Ti as a back contact metal. We further estimate the barrier heights of the junctions between these metals and tin sulfide using temperature-dependent TLM measurements. The barrier heights of these three metals lie in a narrow range of 0.23-0.26 eV, despite their large differences in work function. This Fermi level pinning effect is consistent with the large dielectric constant of SnS, and comparable to Fermi-level pinning on Si. The contact resistivity between annealed SnS films and Mo substrates under light illumination is as low as 0.1 Ω cm2. National Science Foundation (U.S.) (Award No. 1541959) 2018-11-19T15:08:16Z 2018-11-19T15:08:16Z 2017-07 2017-04 2018-11-05T17:30:54Z Article http://purl.org/eprint/type/JournalArticle 0021-8979 1089-7550 http://hdl.handle.net/1721.1/119181 Yang, Chuanxi, Leizhi Sun, Riley E. Brandt, Sang Bok Kim, Xizhu Zhao, Jun Feng, Tonio Buonassisi, and Roy G. Gordon. “Measurement of Contact Resistivity at Metal-Tin Sulfide (SnS) Interfaces.” Journal of Applied Physics 122, no. 4 (July 28, 2017): 045303. https://orcid.org/0000-0003-2785-552X https://orcid.org/0000-0001-8345-4937 http://dx.doi.org/10.1063/1.4992086 Journal of Applied Physics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf AIP Publishing Other univ. web domain |
| spellingShingle | Yang, Chuanxi Sun, Leizhi Kim, Sang Bok Feng, Jun Gordon, Roy G. Brandt, Riley E Zhao, Xizhu Buonassisi, Anthony Measurement of contact resistivity at metal-tin sulfide (SnS) interfaces |
| title | Measurement of contact resistivity at metal-tin sulfide (SnS) interfaces |
| title_full | Measurement of contact resistivity at metal-tin sulfide (SnS) interfaces |
| title_fullStr | Measurement of contact resistivity at metal-tin sulfide (SnS) interfaces |
| title_full_unstemmed | Measurement of contact resistivity at metal-tin sulfide (SnS) interfaces |
| title_short | Measurement of contact resistivity at metal-tin sulfide (SnS) interfaces |
| title_sort | measurement of contact resistivity at metal tin sulfide sns interfaces |
| url | http://hdl.handle.net/1721.1/119181 https://orcid.org/0000-0003-2785-552X https://orcid.org/0000-0001-8345-4937 |
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