Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers

Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers

We investigate the microscopic distributions of sub-band-gap luminescence emission (the so-called D-lines D1/D2/D3/D4) and the band-to-band luminescence intensity, near recombination-active subgrain boundaries in multicrystalline silicon wafers for solar cells. We find that the sub-band-gap luminesc...

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Bibliographic Details
Main Authors: Samundsett, Christian, Sio, Hang C., Lai, Barry, Li, Li, Nguyen, Hieu T., Jensen, Mallory Ann, Buonassisi, Anthony, MacDonald, Daniel G
Other Authors: Massachusetts Institute of Technology. Department of Civil and Environmental Engineering
Format: Article
Published: Institute of Electrical and Electronics Engineers (IEEE) 2018
Online Access:http://hdl.handle.net/1721.1/119182
https://orcid.org/0000-0002-5353-0780
https://orcid.org/0000-0001-8345-4937

Internet

http://hdl.handle.net/1721.1/119182
https://orcid.org/0000-0002-5353-0780
https://orcid.org/0000-0001-8345-4937

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