Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers
We investigate the microscopic distributions of sub-band-gap luminescence emission (the so-called D-lines D1/D2/D3/D4) and the band-to-band luminescence intensity, near recombination-active subgrain boundaries in multicrystalline silicon wafers for solar cells. We find that the sub-band-gap luminesc...
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Institute of Electrical and Electronics Engineers (IEEE)
2018
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| Online Access: | http://hdl.handle.net/1721.1/119182 https://orcid.org/0000-0002-5353-0780 https://orcid.org/0000-0001-8345-4937 |
| _version_ | 1811097444318969856 |
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| author | Samundsett, Christian Sio, Hang C. Lai, Barry Li, Li Nguyen, Hieu T. Jensen, Mallory Ann Buonassisi, Anthony MacDonald, Daniel G |
| author2 | Massachusetts Institute of Technology. Department of Civil and Environmental Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Civil and Environmental Engineering Samundsett, Christian Sio, Hang C. Lai, Barry Li, Li Nguyen, Hieu T. Jensen, Mallory Ann Buonassisi, Anthony MacDonald, Daniel G |
| author_sort | Samundsett, Christian |
| collection | MIT |
| description | We investigate the microscopic distributions of sub-band-gap luminescence emission (the so-called D-lines D1/D2/D3/D4) and the band-to-band luminescence intensity, near recombination-active subgrain boundaries in multicrystalline silicon wafers for solar cells. We find that the sub-band-gap luminescence from decorating defects/impurities (D1/D2) and from intrinsic dislocations (D3/D4) has distinctly different spatial distributions, and is asymmetric across the subgrain boundaries. The presence of D1/D2 is correlated with a strong reduction in the band-to-band luminescence, indicating a higher recombination activity. In contrast, D3/D4 emissions are not strongly correlated with the band-to-band intensity. Based on spatially resolved, synchrotron-based micro-X-ray fluorescence measurements of metal impurities, we confirm that high densities of metal impurities are present at locations with strong D1/D2 emission but low D3/D4 emission. Finally, we show that the observed asymmetry of the sub-band-gap luminescence across the subgrain boundaries is due to its inclination below the wafer surface. Based on the luminescence asymmetries, the subgrain boundaries are shown to share a common inclination locally, rather than being orientated randomly. |
| first_indexed | 2024-09-23T16:59:38Z |
| format | Article |
| id | mit-1721.1/119182 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T16:59:38Z |
| publishDate | 2018 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1191822022-09-29T22:56:47Z Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers Samundsett, Christian Sio, Hang C. Lai, Barry Li, Li Nguyen, Hieu T. Jensen, Mallory Ann Buonassisi, Anthony MacDonald, Daniel G Massachusetts Institute of Technology. Department of Civil and Environmental Engineering Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Mechanical Engineering Nguyen, Hieu T. Jensen, Mallory Ann Buonassisi, Anthony MacDonald, Daniel G We investigate the microscopic distributions of sub-band-gap luminescence emission (the so-called D-lines D1/D2/D3/D4) and the band-to-band luminescence intensity, near recombination-active subgrain boundaries in multicrystalline silicon wafers for solar cells. We find that the sub-band-gap luminescence from decorating defects/impurities (D1/D2) and from intrinsic dislocations (D3/D4) has distinctly different spatial distributions, and is asymmetric across the subgrain boundaries. The presence of D1/D2 is correlated with a strong reduction in the band-to-band luminescence, indicating a higher recombination activity. In contrast, D3/D4 emissions are not strongly correlated with the band-to-band intensity. Based on spatially resolved, synchrotron-based micro-X-ray fluorescence measurements of metal impurities, we confirm that high densities of metal impurities are present at locations with strong D1/D2 emission but low D3/D4 emission. Finally, we show that the observed asymmetry of the sub-band-gap luminescence across the subgrain boundaries is due to its inclination below the wafer surface. Based on the luminescence asymmetries, the subgrain boundaries are shown to share a common inclination locally, rather than being orientated randomly. Australian Research Council Australian Renewable Energy Agency (gramt RND009) National Science Foundation (U.S.). Graduate Research Fellowship (Grant No.1122374) United States. Department of Energy. Office of Science (Contract No. DE-AC02-06CH11357) 2018-11-19T15:32:48Z 2018-11-19T15:32:48Z 2017-05 2018-11-05T18:06:13Z Article http://purl.org/eprint/type/JournalArticle 2156-3381 2156-3403 http://hdl.handle.net/1721.1/119182 Nguyen, Hieu T., Mallory A. Jensen, Li Li, Christian Samundsett, Hang C. Sio, Barry Lai, Tonio Buonassisi, and Daniel Macdonald. “Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers.” IEEE Journal of Photovoltaics 7, no. 3 (May 2017): 772–780. https://orcid.org/0000-0002-5353-0780 https://orcid.org/0000-0001-8345-4937 http://dx.doi.org/10.1109/JPHOTOV.2017.2684904 IEEE Journal of Photovoltaics Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Other repository |
| spellingShingle | Samundsett, Christian Sio, Hang C. Lai, Barry Li, Li Nguyen, Hieu T. Jensen, Mallory Ann Buonassisi, Anthony MacDonald, Daniel G Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers |
| title | Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers |
| title_full | Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers |
| title_fullStr | Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers |
| title_full_unstemmed | Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers |
| title_short | Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers |
| title_sort | microscopic distributions of defect luminescence from subgrain boundaries in multicrystalline silicon wafers |
| url | http://hdl.handle.net/1721.1/119182 https://orcid.org/0000-0002-5353-0780 https://orcid.org/0000-0001-8345-4937 |
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