Scanning-probe Single-electron Capacitance Spectroscopy
The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the electronic quantum structure of small systems - including individual atomic dopants in semiconductors. Here we present a capacitance-based method, known a...
| Main Authors: | , , , , , |
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| Format: | Article |
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MyJove Corporation
2019
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| Online Access: | http://hdl.handle.net/1721.1/120815 https://orcid.org/0000-0001-5031-1673 |
| _version_ | 1811083363252961280 |
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| author | Walsh, Kathleen A. Romanowich, Megan E. Gasseller, Morewell Kuljanishvili, Irma Ashoori, Raymond Tessmer, Stuart |
| author2 | Massachusetts Institute of Technology. Department of Physics |
| author_facet | Massachusetts Institute of Technology. Department of Physics Walsh, Kathleen A. Romanowich, Megan E. Gasseller, Morewell Kuljanishvili, Irma Ashoori, Raymond Tessmer, Stuart |
| author_sort | Walsh, Kathleen A. |
| collection | MIT |
| description | The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the electronic quantum structure of small systems - including individual atomic dopants in semiconductors. Here we present a capacitance-based method, known as Subsurface Charge Accumulation (SCA) imaging, which is capable of resolving single-electron charging while achieving sufficient spatial resolution to image individual atomic dopants. The use of a capacitance technique enables observation of subsurface features, such as dopants buried many nanometers beneath the surface of a semiconductor material. In principle, this technique can be applied to any system to resolve electron motion below an insulating surface. As in other electric-field-sensitive scanned-probe techniques, the lateral spatial resolution of the measurement depends in part on the radius of curvature of the probe tip. Using tips with a small radius of curvature can enable spatial resolution of a few tens of nanometers. This fine spatial resolution allows investigations of small numbers (down to one) of subsurface dopants. The charge resolution depends greatly on the sensitivity of the charge detection circuitry; using high electron mobility transistors (HEMT) in such circuits at cryogenic temperatures enables a sensitivity of approximately 0.01 electrons/Hz[superscript ½] at 0.3 K[superscript 5]. |
| first_indexed | 2024-09-23T12:31:52Z |
| format | Article |
| id | mit-1721.1/120815 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T12:31:52Z |
| publishDate | 2019 |
| publisher | MyJove Corporation |
| record_format | dspace |
| spelling | mit-1721.1/1208152022-10-01T09:35:26Z Scanning-probe Single-electron Capacitance Spectroscopy Walsh, Kathleen A. Romanowich, Megan E. Gasseller, Morewell Kuljanishvili, Irma Ashoori, Raymond Tessmer, Stuart Massachusetts Institute of Technology. Department of Physics Ashoori, Raymond The integration of low-temperature scanning-probe techniques and single-electron capacitance spectroscopy represents a powerful tool to study the electronic quantum structure of small systems - including individual atomic dopants in semiconductors. Here we present a capacitance-based method, known as Subsurface Charge Accumulation (SCA) imaging, which is capable of resolving single-electron charging while achieving sufficient spatial resolution to image individual atomic dopants. The use of a capacitance technique enables observation of subsurface features, such as dopants buried many nanometers beneath the surface of a semiconductor material. In principle, this technique can be applied to any system to resolve electron motion below an insulating surface. As in other electric-field-sensitive scanned-probe techniques, the lateral spatial resolution of the measurement depends in part on the radius of curvature of the probe tip. Using tips with a small radius of curvature can enable spatial resolution of a few tens of nanometers. This fine spatial resolution allows investigations of small numbers (down to one) of subsurface dopants. The charge resolution depends greatly on the sensitivity of the charge detection circuitry; using high electron mobility transistors (HEMT) in such circuits at cryogenic temperatures enables a sensitivity of approximately 0.01 electrons/Hz[superscript ½] at 0.3 K[superscript 5]. National Science Foundation (U.S.) (DMR-0305461) National Science Foundation (U.S.) (DMR-0906939) National Science Foundation (U.S.) (DMR-0605801) Michigan State University. Institute for Quantum Sciences 2019-03-07T19:00:30Z 2019-03-07T19:00:30Z 2013-07 2019-03-06T19:19:49Z Article http://purl.org/eprint/type/JournalArticle 1940-087X http://hdl.handle.net/1721.1/120815 Walsh, Kathleen A., Megan E. Romanowich, Morewell Gasseller, Irma Kuljanishvili, Raymond Ashoori, and Stuart Tessmer. “Scanning-Probe Single-Electron Capacitance Spectroscopy.” Journal of Visualized Experiments no. 77 (July 30, 2013). https://orcid.org/0000-0001-5031-1673 http://dx.doi.org/10.3791/50676 Journal of Visualized Experiments Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf MyJove Corporation Journal of Visualized Experiments (JOVE) |
| spellingShingle | Walsh, Kathleen A. Romanowich, Megan E. Gasseller, Morewell Kuljanishvili, Irma Ashoori, Raymond Tessmer, Stuart Scanning-probe Single-electron Capacitance Spectroscopy |
| title | Scanning-probe Single-electron Capacitance Spectroscopy |
| title_full | Scanning-probe Single-electron Capacitance Spectroscopy |
| title_fullStr | Scanning-probe Single-electron Capacitance Spectroscopy |
| title_full_unstemmed | Scanning-probe Single-electron Capacitance Spectroscopy |
| title_short | Scanning-probe Single-electron Capacitance Spectroscopy |
| title_sort | scanning probe single electron capacitance spectroscopy |
| url | http://hdl.handle.net/1721.1/120815 https://orcid.org/0000-0001-5031-1673 |
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