Calculating the band structure of 3C-SiC using sp[superscript 3]d[superscript 5]s* + ∆ model

We report on a semiempirical tight-binding model for [subscript 3]C-SiC including the effect of sp[superscript 3]d[superscript 5]s* orbitals and spin–orbit coupling (∆). In this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on Sl...

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Bibliographic Details
Main Authors: Onen, Murat, Turchetti, Marco
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:English
Published: Springer Berlin Heidelberg 2019
Online Access:http://hdl.handle.net/1721.1/121113