Thermoelectric Properties of n-type ZrNiPb-Based Half-Heuslers

Here we investigate the half-Heusler ZrNiPb as a n-type thermoelectric material. Our results show that the n-type ZrNiPb-based materials can achieve high peak power factors, ∼50 μW cm⁻¹ K⁻², by optimally tuning the carrier concentration via Bi doping. By further Sn-alloying in Pb site, we achieve a...

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Bibliographic Details
Main Authors: Mao, Jun, Zhou, Jiawei, Zhu, Hangtian, Liu, Zihang, Zhang, Hao, He, Ran, Chen, Gang, Ren, Zhifeng
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Published: American Chemical Society (ACS) 2019
Online Access:https://hdl.handle.net/1721.1/121415