Thermoelectric Properties of n-type ZrNiPb-Based Half-Heuslers
Here we investigate the half-Heusler ZrNiPb as a n-type thermoelectric material. Our results show that the n-type ZrNiPb-based materials can achieve high peak power factors, ∼50 μW cm⁻¹ K⁻², by optimally tuning the carrier concentration via Bi doping. By further Sn-alloying in Pb site, we achieve a...
Main Authors: | Mao, Jun, Zhou, Jiawei, Zhu, Hangtian, Liu, Zihang, Zhang, Hao, He, Ran, Chen, Gang, Ren, Zhifeng |
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Other Authors: | Massachusetts Institute of Technology. Department of Mechanical Engineering |
Format: | Article |
Published: |
American Chemical Society (ACS)
2019
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Online Access: | https://hdl.handle.net/1721.1/121415 |
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