Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit

Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit

This letter presents the first experimental study on capacitances, charges, and power-switching figure of merits (FOM) for a large-area vertical GaN power transistor. A 1.2-kV, 5-A GaN vertical power FinFET was demonstrated in a chip area of 0.45 mm2, with a specific on-resistance of 2.1 mΩ·cm2 and...

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Bibliographic Details
Main Authors: Zhang, Yuhao, Sun, Min, Perozek, Joshua A., Liu, Zhihong, Zubair, Ahmad, Piedra, Daniel, Chowdhury, Nadim, Gao, Xiang, Shepard, Kenneth, Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE) 2019
Online Access:https://hdl.handle.net/1721.1/121563

Internet

https://hdl.handle.net/1721.1/121563

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