Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit
This letter presents the first experimental study on capacitances, charges, and power-switching figure of merits (FOM) for a large-area vertical GaN power transistor. A 1.2-kV, 5-A GaN vertical power FinFET was demonstrated in a chip area of 0.45 mm2, with a specific on-resistance of 2.1 mΩ·cm2 and...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Institute of Electrical and Electronics Engineers (IEEE)
2019
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| Online Access: | https://hdl.handle.net/1721.1/121563 |
| _version_ | 1826202391061463040 |
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| author | Zhang, Yuhao Sun, Min Perozek, Joshua A. Liu, Zhihong Zubair, Ahmad Piedra, Daniel Chowdhury, Nadim Gao, Xiang Shepard, Kenneth Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Microsystems Technology Laboratories |
| author_facet | Massachusetts Institute of Technology. Microsystems Technology Laboratories Zhang, Yuhao Sun, Min Perozek, Joshua A. Liu, Zhihong Zubair, Ahmad Piedra, Daniel Chowdhury, Nadim Gao, Xiang Shepard, Kenneth Palacios, Tomas |
| author_sort | Zhang, Yuhao |
| collection | MIT |
| description | This letter presents the first experimental study on capacitances, charges, and power-switching figure of merits (FOM) for a large-area vertical GaN power transistor. A 1.2-kV, 5-A GaN vertical power FinFET was demonstrated in a chip area of 0.45 mm2, with a specific on-resistance of 2.1 mΩ·cm2 and a threshold voltage of 1.3 V. Device junction capacitances were characterized and their main components were identified. This was used to calculate the switching charges and practical switching frequencies. Device FOMs were then derived that take into account the trade-offs between the conduction and switching power losses. Our GaN vertical FinFETs exhibit high-frequency (MHz) switching capabilities and superior switching FOMs when compared with commercial 0.9-1.2-kV Si and SiC power transistors. This letter shows the great potential of GaN vertical FinFETs for next-generation medium-voltage power electronics. |
| first_indexed | 2024-09-23T12:06:43Z |
| format | Article |
| id | mit-1721.1/121563 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T12:06:43Z |
| publishDate | 2019 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1215632022-09-28T00:15:09Z Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit Zhang, Yuhao Sun, Min Perozek, Joshua A. Liu, Zhihong Zubair, Ahmad Piedra, Daniel Chowdhury, Nadim Gao, Xiang Shepard, Kenneth Palacios, Tomas Massachusetts Institute of Technology. Microsystems Technology Laboratories Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science This letter presents the first experimental study on capacitances, charges, and power-switching figure of merits (FOM) for a large-area vertical GaN power transistor. A 1.2-kV, 5-A GaN vertical power FinFET was demonstrated in a chip area of 0.45 mm2, with a specific on-resistance of 2.1 mΩ·cm2 and a threshold voltage of 1.3 V. Device junction capacitances were characterized and their main components were identified. This was used to calculate the switching charges and practical switching frequencies. Device FOMs were then derived that take into account the trade-offs between the conduction and switching power losses. Our GaN vertical FinFETs exhibit high-frequency (MHz) switching capabilities and superior switching FOMs when compared with commercial 0.9-1.2-kV Si and SiC power transistors. This letter shows the great potential of GaN vertical FinFETs for next-generation medium-voltage power electronics. 2019-07-10T17:16:31Z 2019-07-10T17:16:31Z 2018-11 2019-07-01T13:30:51Z Article http://purl.org/eprint/type/JournalArticle 0741-3106 1558-0563 https://hdl.handle.net/1721.1/121563 Zhang, Yuhao et al. "Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit." IEEE Electron Device Letters 40, 1 (January 2019): 75 - 78 © 2018 IEEE en http://dx.doi.org/10.1109/led.2018.2880306 IEEE Electron Device Letters Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Other repository |
| spellingShingle | Zhang, Yuhao Sun, Min Perozek, Joshua A. Liu, Zhihong Zubair, Ahmad Piedra, Daniel Chowdhury, Nadim Gao, Xiang Shepard, Kenneth Palacios, Tomas Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit |
| title | Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit |
| title_full | Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit |
| title_fullStr | Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit |
| title_full_unstemmed | Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit |
| title_short | Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit |
| title_sort | large area 1 2 kv gan vertical power finfets with a record switching figure of merit |
| url | https://hdl.handle.net/1721.1/121563 |
| work_keys_str_mv | AT zhangyuhao largearea12kvganverticalpowerfinfetswitharecordswitchingfigureofmerit AT sunmin largearea12kvganverticalpowerfinfetswitharecordswitchingfigureofmerit AT perozekjoshuaa largearea12kvganverticalpowerfinfetswitharecordswitchingfigureofmerit AT liuzhihong largearea12kvganverticalpowerfinfetswitharecordswitchingfigureofmerit AT zubairahmad largearea12kvganverticalpowerfinfetswitharecordswitchingfigureofmerit AT piedradaniel largearea12kvganverticalpowerfinfetswitharecordswitchingfigureofmerit AT chowdhurynadim largearea12kvganverticalpowerfinfetswitharecordswitchingfigureofmerit AT gaoxiang largearea12kvganverticalpowerfinfetswitharecordswitchingfigureofmerit AT shepardkenneth largearea12kvganverticalpowerfinfetswitharecordswitchingfigureofmerit AT palaciostomas largearea12kvganverticalpowerfinfetswitharecordswitchingfigureofmerit |