Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit
This letter presents the first experimental study on capacitances, charges, and power-switching figure of merits (FOM) for a large-area vertical GaN power transistor. A 1.2-kV, 5-A GaN vertical power FinFET was demonstrated in a chip area of 0.45 mm2, with a specific on-resistance of 2.1 mΩ·cm2 and...
| Main Authors: | , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2019
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| Online Access: | https://hdl.handle.net/1721.1/121563 |