GaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronics
We study the performance of GaN nanowire n-MOSFETs (GaN-NW-nFETs) with a channel length, Lg = 5 nm based on fully ballistic quantum transport simulations. Our simulation results show high ION = 1137μA/μm and excellent on-off characteristics with Q = gm/SS = 188 μS-decade/μm-mV calculated for Ioff =...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2019
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| Online Access: | https://hdl.handle.net/1721.1/121568 |