GaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronics
We study the performance of GaN nanowire n-MOSFETs (GaN-NW-nFETs) with a channel length, Lg = 5 nm based on fully ballistic quantum transport simulations. Our simulation results show high ION = 1137μA/μm and excellent on-off characteristics with Q = gm/SS = 188 μS-decade/μm-mV calculated for Ioff =...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Institute of Electrical and Electronics Engineers (IEEE)
2019
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| Online Access: | https://hdl.handle.net/1721.1/121568 |
| _version_ | 1826211985203658752 |
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| author | Chowdhury, Nadim Antoniadis, Dimitri A. Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Chowdhury, Nadim Antoniadis, Dimitri A. Palacios, Tomas |
| author_sort | Chowdhury, Nadim |
| collection | MIT |
| description | We study the performance of GaN nanowire n-MOSFETs (GaN-NW-nFETs) with a channel length, Lg = 5 nm based on fully ballistic quantum transport simulations. Our simulation results show high ION = 1137μA/μm and excellent on-off characteristics with Q = gm/SS = 188 μS-decade/μm-mV calculated for Ioff = 1 nA/μm and VGS = VDS = VCC = 0.5 V. These results represent: 1) ∼ 15% higher Ion than Si-NW-nFET and 2) ∼ 17% better Q than Si-NW-nFET, all with Lg = 5 nm, thus suggesting the GaN n-channel, an intriguing option for application in logic at sub-10-nm channel length. The superior performance of the GaN channel compared with Si and other semiconductors at this scaled dimension can be attributed to its relatively higher effective mass of electron and lower permittivity. |
| first_indexed | 2024-09-23T15:14:12Z |
| format | Article |
| id | mit-1721.1/121568 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T15:14:12Z |
| publishDate | 2019 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1215682022-09-29T13:35:16Z GaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronics Chowdhury, Nadim Antoniadis, Dimitri A. Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories We study the performance of GaN nanowire n-MOSFETs (GaN-NW-nFETs) with a channel length, Lg = 5 nm based on fully ballistic quantum transport simulations. Our simulation results show high ION = 1137μA/μm and excellent on-off characteristics with Q = gm/SS = 188 μS-decade/μm-mV calculated for Ioff = 1 nA/μm and VGS = VDS = VCC = 0.5 V. These results represent: 1) ∼ 15% higher Ion than Si-NW-nFET and 2) ∼ 17% better Q than Si-NW-nFET, all with Lg = 5 nm, thus suggesting the GaN n-channel, an intriguing option for application in logic at sub-10-nm channel length. The superior performance of the GaN channel compared with Si and other semiconductors at this scaled dimension can be attributed to its relatively higher effective mass of electron and lower permittivity. 2019-07-10T17:22:07Z 2019-07-10T17:22:07Z 2017-05 2019-07-01T12:39:55Z Article http://purl.org/eprint/type/JournalArticle 0741-3106 1558-0563 https://hdl.handle.net/1721.1/121568 Chowdhury, Nadim, Giuseppe Iannaccone, Gianluca Fiori, Dimitri A. Antoniadis and Tomás Palacios. "GaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronics." Electron Device Letters 38, issue 7 (July 2017): pp. 859 - 862. en 10.1109/LED.2017.2703953 Electron Device Letters Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Other repository |
| spellingShingle | Chowdhury, Nadim Antoniadis, Dimitri A. Palacios, Tomas GaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronics |
| title | GaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronics |
| title_full | GaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronics |
| title_fullStr | GaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronics |
| title_full_unstemmed | GaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronics |
| title_short | GaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronics |
| title_sort | gan nanowire n mosfet with 5 nm channel length for applications in digital electronics |
| url | https://hdl.handle.net/1721.1/121568 |
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