Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides
Lateral heterostructures with planar integrity form the basis of two-dimensional (2D) electronics and optoelectronics. Here we report that, through a two-step chemical vapor deposition (CVD) process, high-quality lateral heterostructures can be constructed between metallic and semiconducting transit...
Main Authors: | , , , , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
American Chemical Society (ACS)
2019
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Online Access: | https://hdl.handle.net/1721.1/121574 |