Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides

Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides

Lateral heterostructures with planar integrity form the basis of two-dimensional (2D) electronics and optoelectronics. Here we report that, through a two-step chemical vapor deposition (CVD) process, high-quality lateral heterostructures can be constructed between metallic and semiconducting transit...

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Bibliographic Details
Main Authors: Leong, Wei Sun, Ji, Qingqing, Mao, Nannan, Wang, Haozhe, Goodman, Aaron Jacob, Vignon, Mikpongbeho Antoine, Su, Cong, Guo, Yunfan, Shen, Pin-Chun, Gao, Zhenfei, Tisdale, William, Muller, David A., Kong, Jing
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:English
Published: American Chemical Society (ACS) 2019
Online Access:https://hdl.handle.net/1721.1/121574

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