N-polar AlN buffer growth by MOVPE for transistor applications

N-polar AlN buffer growth by MOVPE for transistor applications

We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature...

Full description

Bibliographic Details
Main Authors: Lemettinen, Jori, Okumura, Hironori, Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:English
Published: Japan Society of Applied Physics 2019
Online Access:https://hdl.handle.net/1721.1/121579

Internet

https://hdl.handle.net/1721.1/121579

Similar Items