APA (7th ed.) Citation

Lemettinen, J., Okumura, H., Palacios, T., & Science, M. I. o. T. D. o. E. E. a. C. (2019). N-polar AlN buffer growth by MOVPE for transistor applications. Japan Society of Applied Physics.

Chicago Style (17th ed.) Citation

Lemettinen, Jori, Hironori Okumura, Tomas Palacios, and Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. N-polar AlN Buffer Growth by MOVPE for Transistor Applications. Japan Society of Applied Physics, 2019.

MLA (9th ed.) Citation

Lemettinen, Jori, et al. N-polar AlN Buffer Growth by MOVPE for Transistor Applications. Japan Society of Applied Physics, 2019.