N-polar AlN buffer growth by MOVPE for transistor applications
We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature...
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| Format: | Article |
| Language: | English |
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Japan Society of Applied Physics
2019
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| Online Access: | https://hdl.handle.net/1721.1/121579 |
| _version_ | 1811097091314810880 |
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| author | Lemettinen, Jori Okumura, Hironori Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Lemettinen, Jori Okumura, Hironori Palacios, Tomas |
| author_sort | Lemettinen, Jori |
| collection | MIT |
| description | We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing a high buffer leakage current. The silicon concentration decreases from 2 × 1018 to 9 × 1015 cm-3 with decreasing growth temperature, reducing the buffer leakage current to 5.6 nA/mm at a 100 V bias. The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6 × 104 owing to the low leakage of AlN buffer layers. |
| first_indexed | 2024-09-23T16:54:11Z |
| format | Article |
| id | mit-1721.1/121579 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T16:54:11Z |
| publishDate | 2019 |
| publisher | Japan Society of Applied Physics |
| record_format | dspace |
| spelling | mit-1721.1/1215792022-10-03T09:03:40Z N-polar AlN buffer growth by MOVPE for transistor applications Lemettinen, Jori Okumura, Hironori Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing a high buffer leakage current. The silicon concentration decreases from 2 × 1018 to 9 × 1015 cm-3 with decreasing growth temperature, reducing the buffer leakage current to 5.6 nA/mm at a 100 V bias. The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6 × 104 owing to the low leakage of AlN buffer layers. Academy of Finland (Grant 297916) Japan Society for the Promotion of Science. Grant-in-Aid for Scientific Research (Grant No. 16H0642)4 Japan Society for the Promotion of Science. Grant-in-Aid for Scientific Research (Grant No. 17K14110) 2019-07-10T18:53:18Z 2019-07-10T18:53:18Z 2018 2018-11 2019-07-01T14:04:39Z Article http://purl.org/eprint/type/JournalArticle 1882-0786 1882-0778 https://hdl.handle.net/1721.1/121579 Lemettinen, Jori, Hironori Okumura, Tomás Palacios and Sami Suihkonen. "N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications." Applied Physics Express 11 (2018). en 10.7567/APEX.11.101002 Applied Physics Express Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Japan Society of Applied Physics arXiv |
| spellingShingle | Lemettinen, Jori Okumura, Hironori Palacios, Tomas N-polar AlN buffer growth by MOVPE for transistor applications |
| title | N-polar AlN buffer growth by MOVPE for transistor applications |
| title_full | N-polar AlN buffer growth by MOVPE for transistor applications |
| title_fullStr | N-polar AlN buffer growth by MOVPE for transistor applications |
| title_full_unstemmed | N-polar AlN buffer growth by MOVPE for transistor applications |
| title_short | N-polar AlN buffer growth by MOVPE for transistor applications |
| title_sort | n polar aln buffer growth by movpe for transistor applications |
| url | https://hdl.handle.net/1721.1/121579 |
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