N-polar AlN buffer growth by MOVPE for transistor applications
We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Japan Society of Applied Physics
2019
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| Online Access: | https://hdl.handle.net/1721.1/121579 |